Effect of hydrogen peroxide on crystalline orientation and optoelectrical properties of aluminum-doped zinc oxide prepared by chemical bath deposition | ||
| Journal of Ultrafine Grained and Nanostructured Materials | ||
| مقاله 10، دوره 58، شماره 2، اسفند 2025، صفحه 255-263 اصل مقاله (1.29 M) | ||
| نوع مقاله: Research Paper | ||
| شناسه دیجیتال (DOI): 10.22059/jufgnsm.2025.02.10 | ||
| نویسندگان | ||
| Parvin Asen1؛ Maryam Heidariramsheh* 2؛ Parvin Abachi3؛ Nima Taghavinia4 | ||
| 1Department of Nano Biotechnology, Faculty of Biotechnology, Amol University of Special Modern Technologies, Amol 46158-63111, Iran | ||
| 2School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, P.O. Box 11155-4563, Tehran, Iran | ||
| 3Department of Materials Science and Engineering, Sharif University of Technology, Azadi Avenue, Tehran, 14588, Iran | ||
| 4Nanoparticles and Coatings Lab, Department of Physics, Sharif University of Technology, Tehran, 14588, Iran | ||
| چکیده | ||
| The current work demonstrates the growth of aluminum-doped ZnO (AZO) hexagonal rods vertically aligned on soda-lime glass (SLG) via the chemical bath deposition (CBD) method. The controlling crystalline orientation was performed using hydrogen peroxide (H2O2) accompanied by C6H17N3O7 as growth controlling agents (CAs). The results showed that the presence of H2O2 significantly promoted (002) plane orientation and significantly improved structural, morphological, and optical properties of AZO. The as-fabricated AZO with H2O2 exhibited a layer thickness of 1.8 μm, optical transparency of 90.4 %, sheet resistivity of 10 Ω □-1, and the resistivity of 1.8 ×10^(-3) Ω.cm. This approach provides an efficient route to alter the AZO morphology and properties for advanced optoelectronic applications. | ||
| کلیدواژهها | ||
| Transparent Conductive Oxide؛ Aluminum-doped zinc oxide؛ Chemical Bath deposition؛ Controlling agent؛ H2O2 | ||
| مراجع | ||
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آمار تعداد مشاهده مقاله: 469 تعداد دریافت فایل اصل مقاله: 331 |
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